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| HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C Terminal (current limit) T C = 25C; Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C IXFE 180N10 VDSS ID25 RDS(on) = 100 V = 176 A = 8 m trr 250 ns Maximum Ratings 100 100 20 30 176 100 720 180 60 3 5 500 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A mJ J V/ns ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features W C C C C V~ V~ *Conforms to SOT-227B outline *Encapsulating epoxy meets *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance UL 94 V-0, flammability classification Mounting torque Terminal connection torque 1.5/13Nm/lb.in. 1.5/13Nm/lb.in. 19 g *Fast intrinsic Rectifier Applications * DC-DC converters Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= 20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = IT Note 2 Min. 100 2 Characteristic Values Typ. Max. V 4 100 V nA A mA m * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting * Low voltage relays Advantages * Easy to mount power supplies controls TJ = 25C TJ = 125C 100 2 8 * Space savings * High power density (c) 2002 IXYS All rights reserved 98902 (2/02) IXFE 180N10 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Note: IT = 90 A 0.07 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 60A, Note 2 Characteristic Values Min. Typ. Max. 60 90 9100 3200 1600 50 90 140 65 360 65 190 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS-227 B Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM Notes: VGS = 0 Repetitive; Note1 IF = 100 A, VGS = 0 V, Note2 I F = 50 A, -di/dt = 100 A/s, V R = 50 V Characteristic Values Min. Typ. Max. 180 720 1.5 250 1.1 13 A A V ns C A Please see IXFN180N10 data sheet for characteristic curves. 1. Pulse width limited by TJM. 2. Pulse test, t 300 ms, duty cycle d 2 % 3. IT = 90A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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